smh op microelectronics c rp. a STP60L60F features super high dense cell design for low r ds(on) . rugged and reliable. to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw oct,13,2011 1 details are subject to change without notice. s g d ver 1.0 product summary v dss i d r ds(on) (m ) @ vgs=10v gds stf series to-220f g r p p r p p symbol v ds v gs i dm e as 5 65 w a p d c 30 -55 to 175 i d units parameter 60 32 95 c/w v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics c/w 144 mj absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a t c =25 c -pulsed b a avalanche energy d maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-case thermal resistance, junction-to-ambient r jc r ja a 26.8 t c =70 c t c =70 c 21 w o
symbol min typ max units bv dss 60 v 1 i gss 100 na v gs(th) v g fs s c iss pf c oss pf c rss pf q g nc t d(on) ns t r ns t d(off) ns t f ns v ds =25v,v gs =0v switching characteristics v dd =30v i d =1a v gs =10v r gen =6ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =16a v ds =20v , i d =16a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs ,i d =250ua v ds =48v , v gs =0v v gs =20v,v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics c f=1.0mhz c STP60L60F www.samhop.com.tw oct,13,2011 2 v sd nc q gs nc q gd gate-drain charge gate-source charge diode forward voltage v ds =30v,i d =25a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =2a v notes v ds =30v,i d =25a,v gs =10v a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 30v.(see figure13) _ _ _ 2 ver 1.0 15 2300 142 108 63 71 162 42 28 19 5 9.6 0.78 1.3 2.8 4 25
stb/p60l60f ver 1.0 www.samhop.com.tw oct,13,2011 3 tj( c) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c) figure 3. on-resistance vs. drain current figure 4. on-resistance variation with drain vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c) figure 5. gate threshold variation tj, junction temperature( c) figure 6. breakdown voltage variation and gate voltage current and temperature with temperature with temperature 0.5 1.0 1.5 2.0 2.5 3.0 52 39 26 13 0 65 0 1.5 3.0 4.5 6.0 7.5 9.0 60 50 40 30 20 10 1 20 40 60 80 100 1 v gs =10v 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 25 50 75 150 100 125 v gs =10v i d =16a 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 0 25 50 75 100 125 150 v ds =v gs i d =250ua -50 -25 0 25 50 75 100 125 150 1.4 1.3 1.2 1.1 1.0 0.9 0.8 i d =250ua 0 0 20 40 60 80 100 v gs = 10v v gs =8v v gs =7v v gs =6v v gs =5v tj=125 c -55 c 25 c
stb/p60l60f ver 1.0 www.samhop.com.tw oct,13,2011 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area switching time(ns) rg, gate resistance( ) figure 11. switching characteristics 90 75 60 45 30 0 0 15 10 1 60 0 0.3 0.6 0.9 1.2 1.5 10 15 20 25 30 3000 2500 2000 1500 1000 500 0 10 8 6 4 2 0 0 4812 16 20 24 28 32 2 46810 110 100 1 10 100 300 v ds =30v,i d =1a v gs =10v 0.1 1 10 60 100 10 1 0.3 v gs =10v single pulse t c =25 c r ds (o n) limit td(on) tr td(off ) tf 1m s 10 ms 10 0us ciss crss coss 05 v ds =30v i d =16a i d =16a 125 c 75 c 25 c 75 c 25 c 125 c 10u s d c
t p v (br )dss i as f igure 13a. figure 13b. u nc l am p ed s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 transient thermal impedance s quare wave p ulse duration (msec) f igure 14. normalized t hermal t rans ient impedance c urve r(t),normalized e ffective STP60L60F ver 1.0 www.samhop.com.tw oct,13,2011 5 d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e r g i as 0.01 t p d.u.t l v ds + - dd 20v v
STP60L60F ver 1.0 www.samhop.com.tw oct,13,2011 6 e # # . % . d . . ' h d g i j f o a a1 b b1 c c2 e l1 l2 l4 l5 o e f g h 4.20 1.95 0.56 0.90 0.55 2.50 9.70 3.20 6.90 15.60 13.50 3.20 2.55 1.30 3.40 2.10 4.80 2.85 1.05 1.50 0.80 3.10 10.30 3.80 7.50 16.40 14.50 1.90 3.80 2.70
STP60L60F ver 1.0 www.samhop.com.tw oct,13,2011 7 f tube
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